Higher battery lifetime, optimal performance out of battery due to new battery management system.

Significantly improved level of Li ion battery control.

Zero losses current magnetic sensor with new material, new architecture for larger sensitivity range and 3.3V and 800V power MOS technology for battery management. New magnetic material for zero losses current magnetic sensor.

High-current sensor, high-temperature interconnection and packaging for temperatures above 200°C.

New storage unit prototype for innovative regenerative braking system with ultra/super capacitors or batteries, evaluation of solar cell technologies.

Optimal system configuration of the whole power train for electrical vehicles, novel power conversion circuit and module with increased efficiency.

IGBTs are optimized for highest efficiency, high voltage capability and high operating temperature. V_CE,Sat reduction by ultra-thin chips (40µm) will result in highest efficiency.

Compact DC/DC converters from 400V or 700V to 12V, 5V or 3.3V in System-in-Package (SiP) with high efficiency. Currently there are only modules with discrete components in much larger housings. New high voltage transistors are integrated in CMOS process, which is extended to higher voltages. New DC-DC converter topologies for these new devices will be investigated and optimised for efficiency.

DC-DC converters for range extending with solar panels, where essential innovations are regulation of single modules to account for different incidence angle of sun light to maximise the efficiency. Further innovation is to convert from a lower voltage (a few volts or even less) up to the E-car battery voltage in the range of 400 or even 700V. New converter circuit topologies for such an extreme conversion ratio will be investigated.

Current capability increase, novel high temperature devices, improved performance and reliability of SiC switches.

GaN HEMT grown by MOCVD on silicon substrate for high-voltage (>750V) high-temperature application. Processing to be developed for rugged conditions at reasonable cost.

New type of SOI based wafer material with buried cavities and conductive polysilicon vias for new generation of inertial sensors.

Development of multiple degree of freedom wide dynamic range inertial sensors based on silicon MEMS technology, integration of angular rate, low-g and mid-g acceleration sensing functionalities on the same MEMS die. Development of novel highly linear damping methods.

Development of novel silicon technologies for force generation, damping, interconnects and packaging, development of novel highly linear damping methods and of high-density interconnection technology for MEMS sensors.